PNY Electronics PNY 2GB vs G Skill Intl F4-2800C15-8GRBB 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-2800C15-8GRBB 8GB

G Skill Intl F4-2800C15-8GRBB 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

G Skill Intl F4-2800C15-8GRBB 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GRBB 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

14.2 13.8

测试中的平均数值
更快的写入速度，GB/s

11.3 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-2800C15-8GRBB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

13.8 14.2
写入速度，GB/s

8.4 11.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2978

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2800C15-8GRBB 8GB

G Skill Intl F4-2800C15-8GRBB 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston ACR26D4S9S8MH-8 8GB

Kingston ACR26D4S9S8MH-8 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

Crucial Technology CT16G4SFRA266.C8FE 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

AMD R744G2400U1S 4GB

AMD R744G2400U1S 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Transcend Information JM3200HLG-8G 8GB

Transcend Information JM3200HLG-8G 8GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

Asgard VMA41UH-MEC1U2AW1 16GB

Asgard VMA41UH-MEC1U2AW1 16GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Crucial Technology BL16G32C16S4B.8FB 16GB

Crucial Technology BL16G32C16S4B.8FB 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

G Skill Intl F4-4000C18-16GVK 16GB

G Skill Intl F4-4000C18-16GVK 16GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology BLS8G3N169ES4.16FE 8GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Crucial Technology CT16G4SFD8266.C8FBD1 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology D12.2324CS.001 8GB

Apacer Technology D12.2324CS.001 8GB