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PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-32GTZR 32GB
比较
PNY Electronics PNY 2GB vs G Skill Intl F4-3200C16-32GTZR 32GB
总分
PNY Electronics PNY 2GB
总分
G Skill Intl F4-3200C16-32GTZR 32GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
30
左右 10% 更低的延时
需要考虑的原因
G Skill Intl F4-3200C16-32GTZR 32GB
报告一个错误
更快的读取速度,GB/s
17.6
13.8
测试中的平均数值
更快的写入速度,GB/s
15.1
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-32GTZR 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
30
读取速度,GB/s
13.8
17.6
写入速度,GB/s
8.4
15.1
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
3728
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
G Skill Intl F4-3200C16-32GTZR 32GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5595-005.A00LF 2GB
Crucial Technology CT16G4SFD824A.M16FB 16GB
Kingston 99U5584-017.A00LF 4GB
Apacer Technology GD2.1542WS.003 8GB
PNY Electronics PNY 2GB
G Skill Intl F4-3200C16-32GTZR 32GB
Kingston KHX1600C9D3/4GX 4GB
Wilk Elektronik S.A. GY2133D464L15/8G 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Essencore Limited KD4AGU880-36A180U 16GB
Samsung M393B5270CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMU32GX4M2C3333C16 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CT16G4SFRA32A.M16FRS 16GB
Corsair CML16GX3M2A1600C10 8GB
Kingston KHX2666C15S4/16G 16GB
Samsung M393B1G70BH0-CK0 8GB
Avant Technology J644GU44J9266NF 32GB
Kingston KHX2800C14D4/8GX 8GB
Corsair CMK32GX4M4A2400C12 8GB
Micron Technology 16JSF51264HZ-1G4D1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Samsung M471B5173QH0-YK0 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
Samsung M378B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
报告一个错误
×
Bug description
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