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PNY Electronics PNY 2GB
Samsung M471A2K43CB1-CRC 16GB

PNY Electronics PNY 2GB vs Samsung M471A2K43CB1-CRC 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 29% 更低的延时
Samsung M471A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M471A2K43CB1-CRC 16GB
报告一个错误
  • 更快的写入速度，GB/s
    9.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Samsung M471A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 38
  • 读取速度，GB/s
    13.8 left arrow 13.8
  • 写入速度，GB/s
    8.4 left arrow 9.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2404

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Samsung M471A2K43CB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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G Skill Intl F4-4000C18-8GTZKW 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
AMD R538G1601U2S 8GB
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Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Samsung M471A4G43MB1-CTD 32GB
Samsung M471A4G43MB1-CTD 32GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
DSL Memory D4SS1G081SH24A-A 8GB
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内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
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内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
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Crucial Technology CB16GS2666.C8ET 16GB
内存RAM
Kingston KHX2400C11D3/4GX 4GB
Kingston KHX2400C11D3/4GX 4GB
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Crucial Technology CT16G4SFD8213.C16FDD 16GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
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Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
内存RAM
Samsung M378B5173DB0-CK0 4GB
Samsung M378B5173DB0-CK0 4GB
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Kingston HX316C10F/4 4GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Lenovo LMKU8G68AHFHD-32A 8GB
内存RAM
Smart Modular SF564128CJ8N6NNSEG 4GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
Wilk Elektronik S.A. GR2133S464L15/8G 8GB
内存RAM