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Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分
star star star star star
Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

总分
star star star star star
Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

差异 规格 评论

差异

Ramaxel Technology RMT3160ED58E9W1600 4GB 需要考虑的原因
Ramaxel Technology RMT3160ED58E9W1600 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 52
    左右 23% 更低的延时
  • 更快的读取速度，GB/s
    12.3 left arrow 10.2
    测试中的平均数值
Micron Technology 36ASF2G72PZ-2G1A2 16GB 需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
  • 更快的写入速度，GB/s
    8.2 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17500 left arrow 12800
    左右 1.37 更高的带宽

规格

完整的技术规格清单
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 52
  • 读取速度，GB/s
    12.3 left arrow 10.2
  • 写入速度，GB/s
    7.8 left arrow 8.2
  • 内存带宽，mbps
    12800 left arrow 17500
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    1806 left arrow 2319

Ramaxel Technology RMT3160ED58E9W1600 4GB RAM的比较

AMD R538G1601S2LS 8GB
Kingston 9905678-023.A00G 8GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Crucial Technology BLT8G4D26AFTA.16FBD 8GB
内存RAM