Samsung 1600 CL10 Series 8GB vs Corsair CMSX4GX4M1A2400C16 4GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Corsair CMSX4GX4M1A2400C16 4GB

Corsair CMSX4GX4M1A2400C16 4GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 139

左右 82% 更低的延时
更快的读取速度，GB/s

16.1 14.4

测试中的平均数值
更快的写入速度，GB/s

10.1 6.9

测试中的平均数值

Corsair CMSX4GX4M1A2400C16 4GB

需要考虑的原因
Corsair CMSX4GX4M1A2400C16 4GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Corsair CMSX4GX4M1A2400C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 139
读取速度，GB/s

16.1 14.4
写入速度，GB/s

10.1 6.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2764 1152

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KV0M5R-HYD 8GB

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Essencore Limited KD48GS88C-32N2200 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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SK Hynix HMAA4GU6MJR8N-VK 32GB

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Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Transcend Information AQD-SD4U4GN21-SG 4GB

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Corsair CMK64GX4M4K3733C17 16GB

Corsair CMK64GX4M4K3733C17 16GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Corsair CM4B16G2L2666A18K2 16GB

Corsair CM4B16G2L2666A18K2 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB

takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Micron Technology 8ATF1G64AZ-3G2R1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Essencore Limited KD48GS88J-26N1900 8GB

Essencore Limited KD48GS88J-26N1900 8GB

Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Micron Technology 18ASF2G72PDZ-2G3D1 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

G Skill Intl F4-3600C16-8GTZRC 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4266C19-8GTZSW 8GB

G Skill Intl F4-4266C19-8GTZSW 8GB