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Samsung 1600 CL10 Series 8GB
Corsair CMW32GX4M4A2666C16 8GB

Samsung 1600 CL10 Series 8GB vs Corsair CMW32GX4M4A2666C16 8GB

总分
star star star star star
Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分
star star star star star
Corsair CMW32GX4M4A2666C16 8GB

Corsair CMW32GX4M4A2666C16 8GB

差异 规格 评论

差异

Samsung 1600 CL10 Series 8GB 需要考虑的原因
Samsung 1600 CL10 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 32
    左右 22% 更低的延时
Corsair CMW32GX4M4A2666C16 8GB 需要考虑的原因
Corsair CMW32GX4M4A2666C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.6 left arrow 16.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.8 left arrow 10.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung 1600 CL10 Series 8GB
Corsair CMW32GX4M4A2666C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 32
  • 读取速度，GB/s
    16.1 left arrow 16.6
  • 写入速度，GB/s
    10.1 left arrow 13.8
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2764 left arrow 3405

Samsung 1600 CL10 Series 8GB RAM的比较

G Skill Intl F3-14900CL10-8GBXL 8GB
Samsung 1600 CL10 Series 8GB

Corsair CMW32GX4M4A2666C16 8GB RAM的比较

Crucial Technology BLS8G4D26BFSC.16FE 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

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A-DATA Technology ADOVE1A0834E 1GB
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Samsung 1600 CL10 Series 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
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内存RAM
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内存RAM
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内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
内存RAM