Samsung M3 78T2863EHS-CF7 1GB vs Kingston 9905711-015.A00G 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Kingston 9905711-015.A00G 4GB

Kingston 9905711-015.A00G 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 13.8

测试中的平均数值
更快的写入速度，GB/s

2,123.3 10.6

测试中的平均数值

Kingston 9905711-015.A00G 4GB

需要考虑的原因
Kingston 9905711-015.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 59

左右 -44% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905711-015.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 41
读取速度，GB/s

4,833.8 13.8
写入速度，GB/s

2,123.3 10.6
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

731 2134

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905711-015.A00G 4GB

Kingston 9905711-015.A00G 4GB

Hexon Technology Pte Ltd HEXON 1GB

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SanMax Technologies Inc. SMD4-U16G48MH-26V 16GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Crucial Technology CB4GU2400.M8E 4GB

Crucial Technology CB4GU2400.M8E 4GB