Samsung M3 78T2863EHS-CF7 1GB vs Teikon TMA451S6AFR8N-TFSC 4GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Teikon TMA451S6AFR8N-TFSC 4GB

Teikon TMA451S6AFR8N-TFSC 4GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 14.6

测试中的平均数值
更快的写入速度，GB/s

2,123.3 11.5

测试中的平均数值

Teikon TMA451S6AFR8N-TFSC 4GB

需要考虑的原因
Teikon TMA451S6AFR8N-TFSC 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 59

左右 -90% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Teikon TMA451S6AFR8N-TFSC 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 31
读取速度，GB/s

4,833.8 14.6
写入速度，GB/s

2,123.3 11.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 2199

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Apacer Technology 78.A1GC6.9H10C 2GB

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Crucial Technology CT8G4SFRA32A.C8FE 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

SK Hynix HMA81GU7CJR8N-VK 8GB

SK Hynix HMA81GU7CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Crucial Technology CT8G4SFRA32A.C4FE 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

Crucial Technology CT8G4DFS824A.C8FE 8GB

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Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB