Samsung M3 78T2953EZ3-CF7 1GB vs Corsair CM4B16G1L3200K18K2 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Corsair CM4B16G1L3200K18K2 16GB

Corsair CM4B16G1L3200K18K2 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值

Corsair CM4B16G1L3200K18K2 16GB

需要考虑的原因
Corsair CM4B16G1L3200K18K2 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 -115% 更低的延时
更快的写入速度，GB/s

15.5 1,950.7

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Corsair CM4B16G1L3200K18K2 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 27
读取速度，GB/s

4,241.0 17.7
写入速度，GB/s

1,950.7 15.5
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

651 3798

RAM Latency Calculator

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RAM 2

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

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Samsung M3 78T2953EZ3-CF7 1GB

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Ramaxel Technology RMT3010EC58E8F1333 2GB

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Samsung M391B5673FH0-CH9 2GB

G Skill Intl F4-3600C19-8GSXW 8GB

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Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

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Micron Technology 4ATF51264AZ-2G6E1 4GB

Micron Technology 4ATF51264AZ-2G6E1 4GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMD8GX4M2B3866C18 4GB

Corsair CMD8GX4M2B3866C18 4GB