Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-3600C14-8GTRGB 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

G Skill Intl F4-3600C14-8GTRGB 8GB

G Skill Intl F4-3600C14-8GTRGB 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.1

测试中的平均数值

G Skill Intl F4-3600C14-8GTRGB 8GB

需要考虑的原因
G Skill Intl F4-3600C14-8GTRGB 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 58

左右 -76% 更低的延时
更快的写入速度，GB/s

11.6 1,950.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3600C14-8GTRGB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 33
读取速度，GB/s

4,241.0 17.1
写入速度，GB/s

1,950.7 11.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

651 2806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112S64CP6-S6 1GB

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Kingston HP37D4U1S8ME-16XR 16GB

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Kingston 9905403-011.A03LF 2GB

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Crucial Technology BL16G36C16U4W.M8FB1 16GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Corsair CMW256GX4M8E3200C16 32GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMW64GX4M4C3000C15 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

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Kingston 9905744-062.A00G 32GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N