Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 9965589-008.D01G 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston 9965589-008.D01G 8GB

Kingston 9965589-008.D01G 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 10

测试中的平均数值

Kingston 9965589-008.D01G 8GB

需要考虑的原因
Kingston 9965589-008.D01G 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 46

左右 -28% 更低的延时
更快的写入速度，GB/s

7.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9965589-008.D01G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 36
读取速度，GB/s

2,909.8 10.0
写入速度，GB/s

1,519.2 7.5
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 2037

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9965589-008.D01G 8GB

Kingston 9965589-008.D01G 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston 9905700-046.A00G 16GB

Kingston 9905700-046.A00G 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Crucial Technology CT16G4SFS832A.C8FE 16GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

Heoriady M471A1K43CB1-CTD 8GB

Heoriady M471A1K43CB1-CTD 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

G Skill Intl F4-2800C15-8GRK 8GB

G Skill Intl F4-2800C15-8GRK 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Kingston XK2M26-MIE-NX 16GB

Kingston XK2M26-MIE-NX 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Crucial Technology BL32G32C16U4BL.M16FB 32GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMD8GX4M2B3600C18 4GB

Corsair CMD8GX4M2B3600C18 4GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

Corsair CMK16GX4M2D3200C16 8GB

Corsair CMK16GX4M2D3200C16 8GB

Corsair CM2X2048-6400C5 2GB

Corsair CM2X2048-6400C5 2GB

Apacer Technology GD2.11173T.001 4GB

Apacer Technology GD2.11173T.001 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A

Corsair CMR128GX4M8Z2933C16 16GB

Corsair CMR128GX4M8Z2933C16 16GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Micron Technology 4ATF51264AZ-3G2E1 4GB

Micron Technology 4ATF51264AZ-3G2E1 4GB