Samsung M3 78T5663FB3-CF7 2GB vs Kingston 99U5663-006.A00G 16GB

总分

Samsung M3 78T5663FB3-CF7 2GB

Samsung M3 78T5663FB3-CF7 2GB

总分

Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB

差异规格评论

差异

Samsung M3 78T5663FB3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663FB3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 15.1

测试中的平均数值
更快的写入速度，GB/s

2,096.4 12.7

测试中的平均数值

Kingston 99U5663-006.A00G 16GB

需要考虑的原因
Kingston 99U5663-006.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 60

左右 -76% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663FB3-CF7 2GB

Kingston 99U5663-006.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 34
读取速度，GB/s

4,168.7 15.1
写入速度，GB/s

2,096.4 12.7
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M4C3200C15 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Avant Technology F641GU67F9333G 8GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Micron Technology 16A6A2G64HZ-2-2E1 16GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

V-GEN D4S4GL32A16TS 4GB

V-GEN D4S4GL32A16TS 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

Essencore Limited IM44GU48N24-FFFHAB 4GB

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Kingston 99U5403-036.A00G 4GB

Corsair CM4X16GE2666C18S4 16GB

Corsair CM4X16GE2666C18S4 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3200C16-16GTZSK 16GB

G Skill Intl F4-3200C16-16GTZSK 16GB