RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMU16GX4M2D3000C16 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Corsair CMU16GX4M2D3000C16 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 14.9
    测试中的平均数值
Corsair CMU16GX4M2D3000C16 8GB 需要考虑的原因
Corsair CMU16GX4M2D3000C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 60
    左右 -200% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Corsair CMU16GX4M2D3000C16 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 20
  • 读取速度，GB/s
    4,595.2 left arrow 19.7
  • 写入速度，GB/s
    2,168.2 left arrow 14.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3400

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Corsair CMU16GX4M2D3000C16 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
Century Micro Inc. CENTURY JAPAN MEMORY 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
HT Micron HTH5AN8G8NCJR-VKD 8GB
内存RAM
Corsair CM2X1024-6400C4 1GB
Corsair CM2X1024-6400C4 1GB
G Skill Intl F4-4000C17-8GTRS 8GB
G Skill Intl F4-4000C17-8GTRS 8GB
内存RAM
Kingston 99U5474-013.A00LF 2GB
Kingston 99U5474-013.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston X5H5PW-MIE 8GB
Kingston X5H5PW-MIE 8GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9905625-030.A00G 8GB
Kingston 9905625-030.A00G 8GB
内存RAM
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
Crucial Technology CT16G4DFD8266.M16FH 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Corsair CMT64GX4M4K3600C18 16GB
Corsair CMT64GX4M4K3600C18 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
Apacer Technology 78.B1GS6.AUC0B 4GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMK64GX4M4C3333C16 16GB
Corsair CMK64GX4M4C3333C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Mushkin MR[ABC]4U320GJJM16G 16GB
Mushkin MR[ABC]4U320GJJM16G 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-2400C15-4GVR 4GB
G Skill Intl F4-2400C15-4GVR 4GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
内存RAM