Samsung M3 78T5663RZ3-CE6 2GB vs G Skill Intl F4-3600C18-16GTZN 16GB

总分

Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CE6 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值
更快的写入速度，GB/s

2,168.2 14.8

测试中的平均数值

G Skill Intl F4-3600C18-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3600C18-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 60

左右 -100% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3600C18-16GTZN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 30
读取速度，GB/s

4,595.2 17.7
写入速度，GB/s

2,168.2 14.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

941 3606

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Smart Modular SMU4TDC3C0K0464SCG 4GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

Samsung M378B5673EH1-CF8 2GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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Mushkin MR[A/B]4U266GHHF8G 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Crucial Technology CB16GS2400.C16J 16GB

Crucial Technology CB16GS2400.C16J 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology AFLD44EK2P 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

UMAX Technology D4-2400-4GB-512X8-L 4GB

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PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB