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Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Patriot Memory (PDP Systems) 3200 C18 Series 8GB

总分
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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Patriot Memory (PDP Systems) 3200 C18 Series 8GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 19.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,168.2 left arrow 14.9
    测试中的平均数值
Patriot Memory (PDP Systems) 3200 C18 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 60
    左右 -88% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Patriot Memory (PDP Systems) 3200 C18 Series 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 32
  • 读取速度，GB/s
    4,595.2 left arrow 19.5
  • 写入速度，GB/s
    2,168.2 left arrow 14.9
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    941 left arrow 3430

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Patriot Memory (PDP Systems) 3200 C18 Series 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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Samsung M391B5673FH0-CH9 2GB
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Patriot Memory (PDP Systems) PSD48G240081 8GB
内存RAM
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内存RAM
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Patriot Memory (PDP Systems) 2666 C15 Series 4GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
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Crucial Technology 8G4US2400.M8B1 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
SK Hynix HMA81GS6CJR8N-VK 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
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G Skill Intl F4-4000C19-16GTRG 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
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Super Talent F24EA8GS 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
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Apacer Technology GD2.0927WH.001 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Corsair CM4X16GE2933C19S2 16MB
Corsair CM4X16GE2933C19S2 16MB
内存RAM
SK Hynix HMA851S6CJR6N-UH 4GB
SK Hynix HMA851S6CJR6N-UH 4GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Micron Technology 16ATF2G64HZ-3G2E1 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
内存RAM