Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMD32GX4M4B3600C16 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMD32GX4M4B3600C16 8GB

Corsair CMD32GX4M4B3600C16 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 18.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 15.0

测试中的平均数值

Corsair CMD32GX4M4B3600C16 8GB

需要考虑的原因
Corsair CMD32GX4M4B3600C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 77

左右 -285% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMD32GX4M4B3600C16 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 20
读取速度，GB/s

3,405.2 18.7
写入速度，GB/s

2,622.0 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3652

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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Crucial Technology BLS8G4D30AESEK.M8FE1 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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SK Hynix HYMP125U64CP8-S6 2GB

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Corsair CML8GX3M2A1600C9 4GB

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V-GEN D4H8GS24A8 8GB

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Team Group Inc. Vulcan-1600 4GB

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Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Corsair CMK64GX4M4K3733C17 16GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Corsair CMU64GX4M4D3000C16 16GB

Corsair CMU64GX4M4D3000C16 16GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Corsair CMSX8GX4M1A2400C16 8GB

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Samsung M471A2K43CB1-CTD 16GB

Samsung M471A2K43CB1-CTD 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB

Crucial Technology CT16G4SFD8266.C16FE 16GB