Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMK32GX4M4B2800C14 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMK32GX4M4B2800C14 8GB

Corsair CMK32GX4M4B2800C14 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.8

测试中的平均数值

Corsair CMK32GX4M4B2800C14 8GB

需要考虑的原因
Corsair CMK32GX4M4B2800C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 77

左右 -208% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK32GX4M4B2800C14 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 25
读取速度，GB/s

3,405.2 15.6
写入速度，GB/s

2,622.0 11.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

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A-DATA Technology VDQVE1B16 2GB

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Kingston 9965640-016.A00G 32GB

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G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-2800C18-16GRS 16GB

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AMD R7416G2400U2S 16GB

AMD R7416G2400U2S 16GB