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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT16G4SFD8266.16FE1 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Crucial Technology CT16G4SFD8266.16FE1 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
15.6
测试中的平均数值
更快的写入速度,GB/s
2,622.0
13.7
测试中的平均数值
需要考虑的原因
Crucial Technology CT16G4SFD8266.16FE1 16GB
报告一个错误
低于PassMark测试中的延时,ns
53
77
左右 -45% 更低的延时
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
53
读取速度,GB/s
3,405.2
15.6
写入速度,GB/s
2,622.0
13.7
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
763
2755
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology CT16G4SFD8266.16FE1 16GB RAM的比较
Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KHX318C10FR/8G 8GB
Kingston KF3600C16D4/8GX 8GB
Kingston 99U5474-022.A00LF 2GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Peak Electronics 256X64M-67E 2GB
Apacer Technology D12.2324CS.001 8GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
G Skill Intl F4-3600C19-16GSXW 16GB
Kingston 99U5584-004.A00LF 4GB
Kingston 9965589-024.D01G 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston KHX2133C14S4/16G 16GB
Samsung M471B5173DB0-YK0 4GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
SK Hynix HMT325S6CFR8C-H9 2GB
AMD R744G2400U1S-UO 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Transcend Information TS2GLH64V4B 16GB
Crucial Technology CT25664AA800.M16FM 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
Kingston KVR800D2N6/2G 2GB
Apacer Technology GD2.1831WS.001 16GB
Samsung M471B5773DH0-CK0 2GB
Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT16G4SFD832A.C16FN 16GB
报告一个错误
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Bug description
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