Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-2666C15-4GVK 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.9

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.8

测试中的平均数值

G Skill Intl F4-2666C15-4GVK 4GB

需要考虑的原因
G Skill Intl F4-2666C15-4GVK 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 77

左右 -221% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-2666C15-4GVK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 24
读取速度，GB/s

3,405.2 15.9
写入速度，GB/s

2,622.0 11.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2508

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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G Skill Intl F4-4000C18-8GTZ 8GB

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SK Hynix HMT31GR7BFR4C-H9 8GB

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Wilk Elektronik S.A. IR2400D464L15S/4G 4GB

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A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingston 99U5723-002.A00G 8GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Crucial Technology CT8G4SFS824A.C8FE 8GB

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Mushkin 991586 2GB

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Kingston 9905713-019.A00G 4GB

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