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Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL15-15-15 D4-3000 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Golden Empire CL15-15-15 D4-3000 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Golden Empire CL15-15-15 D4-3000 8GB

Golden Empire CL15-15-15 D4-3000 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 10.4
    测试中的平均数值
Golden Empire CL15-15-15 D4-3000 8GB 需要考虑的原因
Golden Empire CL15-15-15 D4-3000 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 77
    左右 -196% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL15-15-15 D4-3000 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 26
  • 读取速度，GB/s
    3,405.2 left arrow 13.8
  • 写入速度，GB/s
    2,622.0 left arrow 10.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2691

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Golden Empire CL15-15-15 D4-3000 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M471B5674QH0-YK0 2GB
Samsung M471B5674QH0-YK0 2GB
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL15-15-15 D4-3000 8GB
Golden Empire CL15-15-15 D4-3000 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G30C15U4B.8FE 8GB
Crucial Technology BL8G30C15U4B.8FE 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair MK16GX4M2B3200C16 8GB
Corsair MK16GX4M2B3200C16 8GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
Kingston 9965662-004.A00G 16GB
Kingston 9965662-004.A00G 16GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
AMD R948G3206U2S 8GB
AMD R948G3206U2S 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Kingston ACR32D4U2S8HD-8X 8GB
Kingston ACR32D4U2S8HD-8X 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
G Skill Intl F4-3600C14-8GTRGB 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMW16GX4M2Z2933C16 8GB
Corsair CMW16GX4M2Z2933C16 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL18-22-22 D4-3600 16GB
Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston KHX2933C15D4/8GX 8GB
Kingston KHX2933C15D4/8GX 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Corsair CM4S16GL3200K18K2 16GB
Corsair CM4S16GL3200K18K2 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM