Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9965669-009.A00G 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 9965669-009.A00G 8GB

Kingston 9965669-009.A00G 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 10.3

测试中的平均数值

Kingston 9965669-009.A00G 8GB

需要考虑的原因
Kingston 9965669-009.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 77

左右 -133% 更低的延时
更快的写入速度，GB/s

8.3 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9965669-009.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 33
读取速度，GB/s

3,405.2 10.3
写入速度，GB/s

2,622.0 8.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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V-Color Technology Inc. TL48G24S815RGB 8GB

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Crucial Technology BLS16G4D240FSE.16FD 16GB

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SK Hynix HMA451U6AFR8N-TF 4GB

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Patriot Memory (PDP Systems) 2666 C15 Series 4GB

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SanMax Technologies Inc. SMD4-S8G48ME-26V 8GB

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G Skill Intl F4-4000C18-32GTZR 32GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

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Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

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G Skill Intl F4-3600C17-16GTZKW 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB

Crucial Technology BL8G32C16U4WL.M8FE1 8GB