Samsung M3 93T5750CZA-CE6 2GB vs Kingston 99U5702-020.A00G 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 99U5702-020.A00G 8GB

Kingston 99U5702-020.A00G 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 13.2

测试中的平均数值

Kingston 99U5702-020.A00G 8GB

需要考虑的原因
Kingston 99U5702-020.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 77

左右 -235% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 99U5702-020.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 23
读取速度，GB/s

3,405.2 17.6
写入速度，GB/s

2,622.0 13.2
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3099

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 99U5702-020.A00G 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston XW21KG-MIE2 8GB

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Crucial Technology CT16G4SFRA32A.C16FP 16GB

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Corsair CMT32GX4M4C3200C16 8GB

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Kingston 99U5584-004.A00LF 4GB

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Corsair CM4X4GF2133C15S2 4GB

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Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Crucial Technology BL16G36C16U4R.M8FB1 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C

G Skill Intl F4-3000C16-16GISB 16GB

G Skill Intl F4-3000C16-16GISB 16GB