Samsung M3 93T5750CZA-CE6 2GB vs Patriot Memory (PDP Systems) 3600 C14 Series 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.7

测试中的平均数值

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C14 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

19 77

左右 -305% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Patriot Memory (PDP Systems) 3600 C14 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 19
读取速度，GB/s

3,405.2 16.6
写入速度，GB/s

2,622.0 14.7
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3626

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Corsair CMK8GX4M2C3000C16 4GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Mushkin MES4S213FF16G28 16GB

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Micron Technology TEAMGROUP-UD4-2400 16GB

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SK Hynix HMA82GS6DJR8N-WM 16GB

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