Samsung M378A5244CB0-CTD 4GB vs G Skill Intl F4-2400C16-8GRSB 8GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

G Skill Intl F4-2400C16-8GRSB 8GB

G Skill Intl F4-2400C16-8GRSB 8GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

更快的读取速度，GB/s

15.8 15.5

测试中的平均数值
更快的写入速度，GB/s

11.8 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

G Skill Intl F4-2400C16-8GRSB 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GRSB 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 -50% 更低的延时

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

G Skill Intl F4-2400C16-8GRSB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 24
读取速度，GB/s

15.8 15.5
写入速度，GB/s

11.8 9.6
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2497 2442

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M4 70T5663CZ3-CE6 2GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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SK Hynix HMT351R7EFR8C-RD 4GB

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Samsung M471A5644EB0-CPB 2GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston MSI24D4S7D8MB-16 16GB

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Kingston 9905403-061.A00LF 2GB

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Samsung M378B5773DH0-CH9 2GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB

Wilk Elektronik S.A. GR2400D464L17S/4G 4GB