Samsung M378B5173BH0-CH9 4GB vs Corsair CMK32GX4M4B3333C16 8GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Corsair CMK32GX4M4B3333C16 8GB

Corsair CMK32GX4M4B3333C16 8GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 15% 更低的延时

Corsair CMK32GX4M4B3333C16 8GB

需要考虑的原因
Corsair CMK32GX4M4B3333C16 8GB

报告一个错误

更快的读取速度，GB/s

18.2 13.4

测试中的平均数值
更快的写入速度，GB/s

13.4 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Corsair CMK32GX4M4B3333C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 27
读取速度，GB/s

13.4 18.2
写入速度，GB/s

8.0 13.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2269 3604

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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INTENSO M418039 8GB

INTENSO M418039 8GB

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Crucial Technology CT102464BF160B.C16 8GB

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Samsung M378B5173BH0-CH9 4GB

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Corsair CMK32GX4M4B3333C16 8GB

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Kingston 9905678-121.A00G 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingston 9905678-065.A00G 8GB

Kingston 9905678-065.A00G 8GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-3200C16-8GTZSW 8GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Crucial Technology BL8G26C16S4B.8FD 8GB

Crucial Technology BL8G26C16S4B.8FD 8GB