Samsung M378B5173BH0-CH9 4GB vs Kingston KDK8NX-MIE 16GB

总分

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分

Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

差异规格评论

差异

Samsung M378B5173BH0-CH9 4GB

需要考虑的原因
Samsung M378B5173BH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 34

左右 32% 更低的延时

Kingston KDK8NX-MIE 16GB

需要考虑的原因
Kingston KDK8NX-MIE 16GB

报告一个错误

更快的读取速度，GB/s

17.4 13.4

测试中的平均数值
更快的写入速度，GB/s

11.7 8.0

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173BH0-CH9 4GB

Kingston KDK8NX-MIE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 34
读取速度，GB/s

13.4 17.4
写入速度，GB/s

8.0 11.7
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2269 3142

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA84GR7AFR4N-VK 32GB

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G Skill Intl F4-3200C16-16GTZA 16GB

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Kingston 99U5429-007.A00LF 2GB

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Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

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Kingston HX318C10FK/4 4GB

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Kllisre M471A3243BB0-CP50 16GB

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A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Corsair CMW8GX4M1Z3200C16 8GB

Corsair CMW8GX4M1Z3200C16 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

G Skill Intl F4-2400C15-8GFT 8GB

G Skill Intl F4-2400C15-8GFT 8GB