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Samsung M378B5273DH0-CH9 4GB
Golden Empire CL19-25-25 D4-4000 4GB

Samsung M378B5273DH0-CH9 4GB vs Golden Empire CL19-25-25 D4-4000 4GB

总分
star star star star star
Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分
star star star star star
Golden Empire CL19-25-25 D4-4000 4GB

Golden Empire CL19-25-25 D4-4000 4GB

差异 规格 评论

差异

Samsung M378B5273DH0-CH9 4GB 需要考虑的原因
Samsung M378B5273DH0-CH9 4GB
报告一个错误
Golden Empire CL19-25-25 D4-4000 4GB 需要考虑的原因
Golden Empire CL19-25-25 D4-4000 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 41
    左右 -78% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.8 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5273DH0-CH9 4GB
Golden Empire CL19-25-25 D4-4000 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    41 left arrow 23
  • 读取速度，GB/s
    13.3 left arrow 17.5
  • 写入速度，GB/s
    8.3 left arrow 12.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2176 left arrow 3037

Samsung M378B5273DH0-CH9 4GB RAM的比较

G Skill Intl F3-14900CL9-4GBXL 4GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Golden Empire CL19-25-25 D4-4000 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Golden Empire CL19-25-25 D4-4000 4GB
Golden Empire CL19-25-25 D4-4000 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
Gowe Technology Co. Ltd. GSA16G4SCL196P-26 16GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
Gold Key Technology Co Ltd NMSO480E85-2666E 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Corsair CMW64GX4M4A2666C16 16GB
Corsair CMW64GX4M4A2666C16 16GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingston 9965667-001.A00G 16GB
Kingston 9965667-001.A00G 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
Crucial Technology CT16G4SFD8266.C8FBD1 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
内存RAM
Corsair CML4GX3M2A1600C9 2GB
Corsair CML4GX3M2A1600C9 2GB
Kingston HX316C10F/4 4GB
Kingston HX316C10F/4 4GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Kingston 99U5711-001.A00G 4GB
Kingston 99U5711-001.A00G 4GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Apacer Technology 78.D2GF2.AU30B 16GB
Apacer Technology 78.D2GF2.AU30B 16GB
内存RAM