Samsung M378B5273EB0-CK0 4GB vs Corsair CMZ8GX3M2A1600C9 4GB

总分

Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

总分

Corsair CMZ8GX3M2A1600C9 4GB

Corsair CMZ8GX3M2A1600C9 4GB

差异规格评论

差异

Samsung M378B5273EB0-CK0 4GB

需要考虑的原因
Samsung M378B5273EB0-CK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 5% 更低的延时
更快的读取速度，GB/s

14.6 14.4

测试中的平均数值
更快的写入速度，GB/s

9.6 8.8

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Corsair CMZ8GX3M2A1600C9 4GB

需要考虑的原因
Corsair CMZ8GX3M2A1600C9 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M378B5273EB0-CK0 4GB

Corsair CMZ8GX3M2A1600C9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 39
读取速度，GB/s

14.6 14.4
写入速度，GB/s

9.6 8.8
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2409 2340

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.01G86.9H50C 1GB

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Micron Technology 16ATF2G64AZ-2G1A1 16GB

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Samsung M4 70T5663CZ3-CE6 2GB

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Corsair CM4X8GF2400C16S4 8GB

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Samsung M378B5273EB0-CK0 4GB

Samsung M378B5273EB0-CK0 4GB

Corsair CMZ8GX3M2A1600C9 4GB

Corsair CMZ8GX3M2A1600C9 4GB

AMD R534G1601U1S-UO 4GB

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G Skill Intl F4-4800C18-8GTRG 8GB

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V-GEN D4H4GS24A8 4GB

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INTENSO 5641162 8GB

INTENSO 5641162 8GB

SK Hynix HMT42GR7AFR4A-PB 16GB

SK Hynix HMT42GR7AFR4A-PB 16GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Crucial Technology CT8G4DFRA266.C8FP 8GB

Kingston 99U5471-012.A00LF 4GB

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Samsung M471A1K1KCB1-CRC 8GB

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Kingston 9905403-011.A03LF 2GB

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Kingston KV0M5R-MIE 8GB

Kingston KV0M5R-MIE 8GB