Samsung M378B5673EH1-CF8 2GB vs Kingston 9905630-052.A00G 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Kingston 9905630-052.A00G 16GB

Kingston 9905630-052.A00G 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 30

左右 7% 更低的延时

Kingston 9905630-052.A00G 16GB

需要考虑的原因
Kingston 9905630-052.A00G 16GB

报告一个错误

更快的读取速度，GB/s

14 12.7

测试中的平均数值
更快的写入速度，GB/s

11.5 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Kingston 9905630-052.A00G 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 30
读取速度，GB/s

12.7 14.0
写入速度，GB/s

7.5 11.5
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2408

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Swissbit MEU25664D6BC2EP-30 2GB

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Corsair CMK32GX4M1D3000C16 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Apacer Technology 76.D305G.D060B 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Teikon TMA851U6CJR6N-VKSC 4GB

Teikon TMA851U6CJR6N-VKSC 4GB

Samsung M3 78T3354BZ0-CCC 256MB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB

Crucial Technology CT4G4DFS824A.C8FBR2 4GB