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Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB

Samsung M378B5673FH0-CH9 2GB vs Crucial Technology BLS4G4D240FSB.8FARG 4GB

总分
star star star star star
Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分
star star star star star
Crucial Technology BLS4G4D240FSB.8FARG 4GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB

差异 规格 评论

差异

Samsung M378B5673FH0-CH9 2GB 需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
Crucial Technology BLS4G4D240FSB.8FARG 4GB 需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FARG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 35
    左右 -9% 更低的延时
  • 更快的读取速度，GB/s
    16.1 left arrow 14.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.3 left arrow 9.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 32
  • 读取速度，GB/s
    14.4 left arrow 16.1
  • 写入速度，GB/s
    9.5 left arrow 12.3
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2321 left arrow 2902

Samsung M378B5673FH0-CH9 2GB RAM的比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB

Crucial Technology BLS4G4D240FSB.8FARG 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
SK Hynix HMA84GL7AMR4N-TF 32GB
SK Hynix HMA84GL7AMR4N-TF 32GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Samsung M378A4G43MB1-CTD 32GB
Samsung M378A4G43MB1-CTD 32GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
Crucial Technology CT16G4SFD824A.C16FJ 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
G Skill Intl F4-2800C15-8GTZB 8GB
G Skill Intl F4-2800C15-8GTZB 8GB
内存RAM
Samsung M3 78T2953EZ3-CF7 1GB
Samsung M3 78T2953EZ3-CF7 1GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
内存RAM
Unifosa Corporation GU502203EP0201 1GB
Unifosa Corporation GU502203EP0201 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Corsair CMK16GX4M2Z2400C16 8GB
Corsair CMK16GX4M2Z2400C16 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
SK Hynix HMA84GL7AMR4N-TF 32GB
SK Hynix HMA84GL7AMR4N-TF 32GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
Apacer Technology 78.CAGNK.4040B 8GB
Apacer Technology 78.CAGNK.4040B 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
A-DATA Technology DDR4 3300 2OZ 4GB
内存RAM