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Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-2133C15-4GRR 4GB

Samsung M378B5773CH0-CH9 2GB vs G Skill Intl F4-2133C15-4GRR 4GB

总分
star star star star star
Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分
star star star star star
G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

差异 规格 评论

差异

Samsung M378B5773CH0-CH9 2GB 需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
G Skill Intl F4-2133C15-4GRR 4GB 需要考虑的原因
G Skill Intl F4-2133C15-4GRR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 39
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    14.7 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.9 left arrow 7.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-2133C15-4GRR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 36
  • 读取速度，GB/s
    12.8 left arrow 14.7
  • 写入速度，GB/s
    7.4 left arrow 10.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1770 left arrow 2570

Samsung M378B5773CH0-CH9 2GB RAM的比较

Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB

G Skill Intl F4-2133C15-4GRR 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMD8GX3M2A2933C12 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Corsair CMW32GX4M4C3000C15 8GB
Corsair CMW32GX4M4C3000C15 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Avant Technology J641GU42J7240N3 8GB
Avant Technology J641GU42J7240N3 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Teclast TLD416G26A30 16GB
Teclast TLD416G26A30 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Kingston KHX2666C15/16GX 16GB
Kingston KHX2666C15/16GX 16GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
SK Hynix HMA451R7MFR8N-TF 4GB
SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
Crucial Technology BL8G32C16U4R.M8FE1 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9965640-001.C00G 16GB
Kingston 9965640-001.C00G 16GB
内存RAM
Samsung M471B5273EB0-CK0 4GB
Samsung M471B5273EB0-CK0 4GB
Mushkin MR[A/B]4U266GHHF16G 16GB
Mushkin MR[A/B]4U266GHHF16G 16GB
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9965589-024.D01G 16GB
Kingston 9965589-024.D01G 16GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Kingston 9965596-023.B01G 8GB
Kingston 9965596-023.B01G 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
Kingston 99P5474-014.A00LF 4GB
Kingston 99P5474-014.A00LF 4GB
Micron Technology 8G2666CL19 8GB
Micron Technology 8G2666CL19 8GB
内存RAM