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Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Samsung M378B5773DH0-CH9 2GB vs Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

总分
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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分
star star star star star
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB

差异 规格 评论

差异

Samsung M378B5773DH0-CH9 2GB 需要考虑的原因
Samsung M378B5773DH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 69
    左右 43% 更低的延时
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB 需要考虑的原因
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.1 left arrow 11.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 7.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 69
  • 读取速度，GB/s
    11.7 left arrow 16.1
  • 写入速度，GB/s
    7.2 left arrow 8.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1749 left arrow 1794

Samsung M378B5773DH0-CH9 2GB RAM的比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB

Crucial Technology BLS4G4S26BFSD.8FBD2 4GB RAM的比较

Kingston 9965669-018.A00G 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
Crucial Technology BLS4G4S26BFSD.8FBD2 4GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Corsair CMK8GX4M1D3000C16 8GB
Corsair CMK8GX4M1D3000C16 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9905624-022.A00G 8GB
Kingston 9905624-022.A00G 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Kingmax Semiconductor FLFF65F-C8KM9 4GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
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Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
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SK Hynix HMA41GR7AFR4N-TF 8GB
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Kingston 9965525-140.A00LF 8GB
Kingston HP24D4S7S8MBP-8 8GB
Kingston HP24D4S7S8MBP-8 8GB
内存RAM
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Corsair CMX8GX3M2A1600C11 4GB
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Dust Leopard DDR4-2400 C17 8GB 8GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
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Transcend Information TS1GLH64V4H 8GB
内存RAM
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Kingston 9905403-061.A00LF 2GB
G Skill Intl F4-2666C19-8GSXK 8GB
G Skill Intl F4-2666C19-8GSXK 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X32GC3200C16K2E 32GB
Corsair CM4X32GC3200C16K2E 32GB
内存RAM
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A-DATA Technology DQKD1A08 1GB
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Crucial Technology CT4G4DFS8213.8FA11 4GB
内存RAM
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Samsung M393B1K70QB0-CK0 8GB
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Team Group Inc. TEANGROUP-UD4-2400 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
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Panram International Corporation PUD42400C154GNJW 4GB
内存RAM