Samsung M378B5773DH0-CH9 2GB vs Kingston 9905664-010.A00G 4GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Kingston 9905664-010.A00G 4GB

Kingston 9905664-010.A00G 4GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Kingston 9905664-010.A00G 4GB

需要考虑的原因
Kingston 9905664-010.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 39

左右 -56% 更低的延时
更快的读取速度，GB/s

13.9 11.7

测试中的平均数值
更快的写入速度，GB/s

9.0 7.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Kingston 9905664-010.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 25
读取速度，GB/s

11.7 13.9
写入速度，GB/s

7.2 9.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1749 1944

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

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Kingston 9905664-010.A00G 4GB

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Crucial Technology CT102464BA160B.M16 8GB

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Kingston ACR16D3LS1KBG/8G 8GB

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Crucial Technology BL16G32C16U4W.M8FB1 16GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMK32GX4M4B4000C19 8GB

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Kingmax Semiconductor GLLG42F-18---------- 8GB

Kingmax Semiconductor GLLG42F-18---------- 8GB

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Corsair CMZ16GX3M2A1866C9 8GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

Kingston 9905403-437.A01LF 4GB

Kingston 9905403-437.A01LF 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

Crucial Technology CT4G4SFS824A.C8FBR2 4GB

SK Hynix HYMP112U64CP8-Y5 1GB

SK Hynix HYMP112U64CP8-Y5 1GB

G Skill Intl F4-3200C16-4GVK 4GB

G Skill Intl F4-3200C16-4GVK 4GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

SpecTek Incorporated 16G 2666 CL 19 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB