Samsung M378T5663QZ3-CF7 2GB vs Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 66

左右 15% 更低的延时
更快的读取速度，GB/s

4 16.4

测试中的平均数值

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

需要考虑的原因
Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

报告一个错误

更快的写入速度，GB/s

9.4 1,813.5

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 66
读取速度，GB/s

4,387.7 16.4
写入速度，GB/s

1,813.5 9.4
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

693 2038

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

Crucial Technology BLS4G4D26BFSE.8FBR2 4GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT451S6MFR8C

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

SK Hynix HMA82GS6AFRFR-UH 16GB

SK Hynix HMA82GS6AFRFR-UH 16GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-3000C15-8GVRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

SK Hynix HMT41GU7BFR8A-PB 8GB

Apacer Technology 78.CAGNT.4050B 8GB

Apacer Technology 78.CAGNT.4050B 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

Crucial Technology CT4G4SFS824A.M8FB 4GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Apacer Technology 78.B1GM3.AF00B 4GB

Apacer Technology 78.B1GM3.AF00B 4GB

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

G Skill Intl F4-3200C14-16GTZKY 16GB

G Skill Intl F4-3200C14-16GTZKY 16GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Ramaxel Technology RMT1970ED48E8F1066 2GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

Crucial Technology BLS16G4D30BESB.16FD 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston HP32D4U8S8ME-8X 8GB

Kingston HP32D4U8S8ME-8X 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB