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Samsung M378T5663QZ3-CF7 2GB
Heoriady HX2666CX15D4/4G 4GB

Samsung M378T5663QZ3-CF7 2GB vs Heoriady HX2666CX15D4/4G 4GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Heoriady HX2666CX15D4/4G 4GB

Heoriady HX2666CX15D4/4G 4GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    56 left arrow 77
    左右 27% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 14.7
    测试中的平均数值
Heoriady HX2666CX15D4/4G 4GB 需要考虑的原因
Heoriady HX2666CX15D4/4G 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.6 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Heoriady HX2666CX15D4/4G 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 77
  • 读取速度，GB/s
    4,387.7 left arrow 14.7
  • 写入速度，GB/s
    1,813.5 left arrow 7.6
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    693 left arrow 1688

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Heoriady HX2666CX15D4/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M378T5663QZ3-CF7 2GB
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内存RAM
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内存RAM
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ASint Technology SSA302G08-EGN1C 4GB
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内存RAM
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内存RAM
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SK Hynix HMT41GU7MFR8A-H9 8GB
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内存RAM
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Samsung M378B5673FH0-CH9 2GB
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Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM