Samsung M386B4G70DM0-CMA4 32GB vs Crucial Technology CT8G4SFS824A.C8FDR1 8GB

总分

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

总分

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

差异规格评论

差异

Samsung M386B4G70DM0-CMA4 32GB

需要考虑的原因
Samsung M386B4G70DM0-CMA4 32GB

报告一个错误

更快的写入速度，GB/s

7.2 7.1

测试中的平均数值

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

需要考虑的原因
Crucial Technology CT8G4SFS824A.C8FDR1 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 52

左右 -108% 更低的延时
更快的读取速度，GB/s

14.8 9.7

测试中的平均数值
更高的内存带宽，mbps

19200 14900

左右 1.29 更高的带宽

规格

完整的技术规格清单

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology CT8G4SFS824A.C8FDR1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 25
读取速度，GB/s

9.7 14.8
写入速度，GB/s

7.2 7.1
内存带宽，mbps

14900 19200

Other

描述

PC3-14900, 1.5V, CAS Supported: 6 7 8 9 10 11 13 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

9-10-9-28 / 1866 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2173 2175

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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SK Hynix HMT325U6CFR8C-PB 2GB

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Samsung M386B4G70DM0-CMA4 32GB

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Crucial Technology CT8G4SFS824A.C8FDR1 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Kingston ACR24D4S7S8MB-8 8GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

G Skill Intl F4-3200C16-4GRB 4GB

G Skill Intl F4-3200C16-4GRB 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Ramsta Ramsta-2400Mhz-8G 8GB

Ramsta Ramsta-2400Mhz-8G 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Strontium EVMT8G1600U86S 8GB

Crucial Technology BL16G32C16U4BL.16FE 16GB

Crucial Technology BL16G32C16U4BL.16FE 16GB