Samsung M391B5673EH1-CH9 2GB vs Corsair CMD16GX4M4B3400C16 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Corsair CMD16GX4M4B3400C16 4GB

Corsair CMD16GX4M4B3400C16 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

Corsair CMD16GX4M4B3400C16 4GB

需要考虑的原因
Corsair CMD16GX4M4B3400C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

25 26

左右 -4% 更低的延时
更快的读取速度，GB/s

18.5 12.8

测试中的平均数值
更快的写入速度，GB/s

14.9 9.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Corsair CMD16GX4M4B3400C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 25
读取速度，GB/s

12.8 18.5
写入速度，GB/s

9.0 14.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 3593

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA82GR7JJR8N-VK 16GB

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Panram International Corporation PUD42133C154G2VS 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Transcend Information AQD-SD4U8GE21-SG 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Crucial Technology CT51264BD1339.M16F 4GB

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