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Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB

Samsung M391B5673EH1-CH9 2GB vs G Skill Intl F4-3200C14-16GTZSK 16GB

总分
star star star star star
Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分
star star star star star
G Skill Intl F4-3200C14-16GTZSK 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB

差异 规格 评论

差异

Samsung M391B5673EH1-CH9 2GB 需要考虑的原因
Samsung M391B5673EH1-CH9 2GB
报告一个错误
G Skill Intl F4-3200C14-16GTZSK 16GB 需要考虑的原因
G Skill Intl F4-3200C14-16GTZSK 16GB
报告一个错误
  • 更快的读取速度，GB/s
    19 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.1 left arrow 9.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 26
  • 读取速度，GB/s
    12.8 left arrow 19.0
  • 写入速度，GB/s
    9.0 left arrow 17.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2143 left arrow 4022

Samsung M391B5673EH1-CH9 2GB RAM的比较

Micron Technology 9JSF25672AZ-1G6M1 2GB
Micron Technology 18ASF2G72PDZ-2G3D1 16GB

G Skill Intl F4-3200C14-16GTZSK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3200C14-16GTZSK 16GB
G Skill Intl F4-3200C14-16GTZSK 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Hewlett-Packard 7EH98AA#ABB 8GB
Hewlett-Packard 7EH98AA#ABB 8GB
内存RAM
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-010.A00LF 2GB
Kingston ACR26D4S9S1ME-4 4GB
Kingston ACR26D4S9S1ME-4 4GB
内存RAM
SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3600C16-16GTRSC 16GB
G Skill Intl F4-3600C16-16GTRSC 16GB
内存RAM
Samsung M471B5273CH0-CH9 4GB
Samsung M471B5273CH0-CH9 4GB
Kingston X75V1H-MIE 32GB
Kingston X75V1H-MIE 32GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
SK Hynix GKE800UD102408-2400 8GB
SK Hynix GKE800UD102408-2400 8GB
内存RAM
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1G43TB1-CTD 8GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M378A1K43BB1-CPB 8GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Kingston HX318C10FK/4 4GB
Kingston HX318C10FK/4 4GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
内存RAM