Samsung M391B5673EH1-CH9 2GB vs Kingston HP26D4S9S1ME-4 4GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Kingston HP26D4S9S1ME-4 4GB

Kingston HP26D4S9S1ME-4 4GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 99

左右 74% 更低的延时
更快的写入速度，GB/s

9.0 6.4

测试中的平均数值

Kingston HP26D4S9S1ME-4 4GB

需要考虑的原因
Kingston HP26D4S9S1ME-4 4GB

报告一个错误

更快的读取速度，GB/s

14.4 12.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Kingston HP26D4S9S1ME-4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 99
读取速度，GB/s

12.8 14.4
写入速度，GB/s

9.0 6.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2143 1386

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL16G30C15U4R.M16FE1 16GB

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G Skill Intl F5-6400J3239G16G 16GB

Crucial Technology BLS4G4D26BFSC.8FD2 4GB

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