Samsung M391B5673EH1-CH9 2GB vs Smart Modular SF4721G8CKHH6DFSDS 8GB

总分

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

总分

Smart Modular SF4721G8CKHH6DFSDS 8GB

Smart Modular SF4721G8CKHH6DFSDS 8GB

差异规格评论

差异

Samsung M391B5673EH1-CH9 2GB

需要考虑的原因
Samsung M391B5673EH1-CH9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 34

左右 24% 更低的延时
更快的读取速度，GB/s

12.8 10

测试中的平均数值
更快的写入速度，GB/s

9.0 6.2

测试中的平均数值

Smart Modular SF4721G8CKHH6DFSDS 8GB

需要考虑的原因
Smart Modular SF4721G8CKHH6DFSDS 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M391B5673EH1-CH9 2GB

Smart Modular SF4721G8CKHH6DFSDS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 34
读取速度，GB/s

12.8 10.0
写入速度，GB/s

9.0 6.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2143 1693

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Samsung M391B5673EH1-CH9 2GB

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Kingston 99U5474-010.A00LF 2GB

Thermaltake Technology Co Ltd R022D408GX2-4600C19A 8GB

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Elpida EBJ40EG8BFWB-JS-F 4GB

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Panram International Corporation W4N2400PS-8G 8GB

Panram International Corporation W4N2400PS-8G 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB

Crucial Technology BLS4G4D240FSA.M8FADM 4GB