Samsung M392B1K70CM0-YH9 8GB vs Kingston 9965516-100.A00LF 8GB

总分

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

总分

Kingston 9965516-100.A00LF 8GB

Kingston 9965516-100.A00LF 8GB

差异规格评论

差异

Samsung M392B1K70CM0-YH9 8GB

需要考虑的原因
Samsung M392B1K70CM0-YH9 8GB

报告一个错误

更快的读取速度，GB/s

11 9.9

测试中的平均数值
更快的写入速度，GB/s

10.0 9.6

测试中的平均数值

Kingston 9965516-100.A00LF 8GB

需要考虑的原因
Kingston 9965516-100.A00LF 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 40

左右 -29% 更低的延时
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M392B1K70CM0-YH9 8GB

Kingston 9965516-100.A00LF 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

40 31
读取速度，GB/s

11.0 9.9
写入速度，GB/s

10.0 9.6
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2493 2224

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M392B1K70CM0-YH9 8GB

Samsung M392B1K70CM0-YH9 8GB

Kingston 9965516-100.A00LF 8GB

Kingston 9965516-100.A00LF 8GB

Samsung M378B5173CB0-CK0 4GB

Samsung M378B5173CB0-CK0 4GB

Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Transcend Information JM3200HLE-32G 32GB

Transcend Information JM3200HLE-32G 32GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Kingston 99U5711-001.A00G 4GB

Kingston 99U5711-001.A00G 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Kingston 9905701-003.A00G 16GB

Kingston 9905701-003.A00G 16GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG43F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Patriot Memory (PDP Systems) PSD48G21332 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-4400C18-8GTZRC 8GB

G Skill Intl F4-4400C18-8GTZRC 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

Crucial Technology BL16G36C16U4BL.M16FE 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Patriot Memory (PDP Systems) 2400 C14 Series 8GB

Mushkin 991988 (996988) 4GB

Mushkin 991988 (996988) 4GB

Corsair CMW16GX4M2Z3200C16 8GB

Corsair CMW16GX4M2Z3200C16 8GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5702-089.A00G 8GB

Kingston 99U5702-089.A00G 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

G Skill Intl F4-4000C16-8GTZRA 8GB

G Skill Intl F4-4000C16-8GTZRA 8GB