Samsung M393B1G70BH0-CK0 8GB vs Corsair CMR16GX4M2C 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Corsair CMR16GX4M2C 8GB

Corsair CMR16GX4M2C 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

51 66

左右 23% 更低的延时
更快的写入速度，GB/s

8.1 7.2

测试中的平均数值

Corsair CMR16GX4M2C 8GB

需要考虑的原因
Corsair CMR16GX4M2C 8GB

报告一个错误

更快的读取速度，GB/s

11.4 9.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Corsair CMR16GX4M2C 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 66
读取速度，GB/s

9.8 11.4
写入速度，GB/s

8.1 7.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2208 1604

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3200C14-8GTZRX 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4DFRA266.C8FP 8GB

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Kingston 99U5471-020.A00LF 4GB

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Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB