Samsung M393B1G70BH0-CK0 8GB vs Kingston 9905743-023.A00G 8GB

总分

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分

Kingston 9905743-023.A00G 8GB

Kingston 9905743-023.A00G 8GB

差异规格评论

差异

Samsung M393B1G70BH0-CK0 8GB

需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB

报告一个错误

Kingston 9905743-023.A00G 8GB

需要考虑的原因
Kingston 9905743-023.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 51

左右 -34% 更低的延时
更快的读取速度，GB/s

14.7 9.8

测试中的平均数值
更快的写入速度，GB/s

12.7 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70BH0-CK0 8GB

Kingston 9905743-023.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

51 38
读取速度，GB/s

9.8 14.7
写入速度，GB/s

8.1 12.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2208 2725

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMT16GX4M2C3000C15 8GB

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Kingston 9905403-156.A00LF 2GB

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Micron Technology 36ASF4G72PZ-2G3A1 32GB

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A-DATA Technology DDR4 3600 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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AMD R538G1601U2S 8GB

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Essencore Limited KD44GU481-26N1600 4GB

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PUSKILL DDR3 1600 8G 8GB

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Corsair CMW64GX4M8C3466C16 8GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB

Samsung M378A1G43TB1-CTD 8GB

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Samsung M378A1K43CB2-CRC 8GB

Samsung M378A1K43CB2-CRC 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CM4X4GD3000C15K4 4GB

Corsair CM4X4GD3000C15K4 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

Crucial Technology CT8G4DFRA266.C8FB 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

SK Hynix HMA451U7AFR8N-TF 4GB

SK Hynix HMA451U7AFR8N-TF 4GB