Samsung M393B1G70QH0-YK0 8GB vs Corsair CMD16GX4M4B3333C16 4GB

总分

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

总分

Corsair CMD16GX4M4B3333C16 4GB

Corsair CMD16GX4M4B3333C16 4GB

差异规格评论

差异

Samsung M393B1G70QH0-YK0 8GB

需要考虑的原因
Samsung M393B1G70QH0-YK0 8GB

报告一个错误

Corsair CMD16GX4M4B3333C16 4GB

需要考虑的原因
Corsair CMD16GX4M4B3333C16 4GB

报告一个错误

低于PassMark测试中的延时，ns

18 52

左右 -189% 更低的延时
更快的读取速度，GB/s

19.4 9.8

测试中的平均数值
更快的写入速度，GB/s

15.9 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B1G70QH0-YK0 8GB

Corsair CMD16GX4M4B3333C16 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

52 18
读取速度，GB/s

9.8 19.4
写入速度，GB/s

8.0 15.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2179 3063

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1G70QH0-YK0 8GB

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Kingston ACR512X64D3S13C9G 4GB

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Crucial Technology BLS16G4S26BFSD.16FD 16GB

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Kingston KVR16N11/8-SP 8GB

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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Kingston ACR21D4S15HAG/8G 8GB

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Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

G Skill Intl F4-4000C16-16GTRS 16GB

G Skill Intl F4-4000C16-16GTRS 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK16GX4M2L3200C16 8GB

Corsair CMK16GX4M2L3200C16 8GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Ramaxel Technology RMSA3320ME88HBF-3200 16GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMR32GX4M4C3600C18 8GB

Corsair CMR32GX4M4C3600C18 8GB