Samsung M393B1K70CH0-CH9 8GB vs Team Group Inc. TEAMGROUP-SD4-2666 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Team Group Inc. TEAMGROUP-SD4-2666 16GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Team Group Inc. TEAMGROUP-SD4-2666 16GB

需要考虑的原因
Team Group Inc. TEAMGROUP-SD4-2666 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 44

左右 -29% 更低的延时
更快的读取速度，GB/s

15.7 11.2

测试中的平均数值
更快的写入速度，GB/s

13.0 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 34
读取速度，GB/s

11.2 15.7
写入速度，GB/s

8.1 13.0
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2293 3052

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Team Group Inc. TEAMGROUP-SD4-2666 16GB

Team Group Inc. TEAMGROUP-SD4-2666 16GB

Samsung M378A1K43EB2-CWE 8GB

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G Skill Intl F4-3866C18-16GTZR 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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SK Hynix HMAA4GU6AJR8N-VK 32GB

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Kingston 9905471-071.A00LF 8GB

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Wilk Elektronik S.A. GR2133S464L15/8G 8GB

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TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

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Corsair CMWX8GF2933Z16W4 8GB

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Micron Technology 4ATF1G64HZ-3G2E2 8GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMU32GX4M2D3200C16 16GB

Corsair CMU32GX4M2D3200C16 16GB