Samsung M393B1K70QB0-CK0 8GB vs Crucial Technology BL8G32C16S4B.8FE 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Crucial Technology BL8G32C16S4B.8FE 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

Crucial Technology BL8G32C16S4B.8FE 8GB

需要考虑的原因
Crucial Technology BL8G32C16S4B.8FE 8GB

报告一个错误

低于PassMark测试中的延时，ns

41 47

左右 -15% 更低的延时
更快的读取速度，GB/s

16.1 10.4

测试中的平均数值
更快的写入速度，GB/s

13.2 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Crucial Technology BL8G32C16S4B.8FE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 41
读取速度，GB/s

10.4 16.1
写入速度，GB/s

7.8 13.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2169 2870

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF2G64AZ-2G3H1 16GB

Micron Technology 16ATF2G64AZ-2G3H1 16GB

SpecTek Incorporated ?????????????????? 2GB

SpecTek Incorporated ?????????????????? 2GB

Kingston KF3200C16D4/32GX 32GB

Kingston KF3200C16D4/32GX 32GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston 9905700-024.A00G 8GB

Kingston 9905700-024.A00G 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF4722G4CKHH6DFSDS 16GB

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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Cortus SAS 8ATF51264AZ-2G1A1 4GB

Patriot Memory (PDP Systems) 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) 1600 CL10 Series 8GB

Corsair CMK16GX4M2C3200C16 8GB

Corsair CMK16GX4M2C3200C16 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Transcend Information AQD-D4U4GN21-SG 4GB

Transcend Information AQD-D4U4GN21-SG 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Corsair CMW32GX4M4Z4000C18 8GB

Corsair CMW32GX4M4Z4000C18 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160UD10240

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

G Skill Intl F4-3600C17-8GTRS 8GB

G Skill Intl F4-3600C17-8GTRS 8GB