Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-2133C15-8GFT 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

G Skill Intl F4-2133C15-8GFT 8GB

G Skill Intl F4-2133C15-8GFT 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

G Skill Intl F4-2133C15-8GFT 8GB

需要考虑的原因
G Skill Intl F4-2133C15-8GFT 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 -38% 更低的延时
更快的读取速度，GB/s

15.6 8

测试中的平均数值
更快的写入速度，GB/s

10.4 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-2133C15-8GFT 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 24
读取速度，GB/s

8.0 15.6
写入速度，GB/s

7.3 10.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 2736

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F4-3000C14-16GVR 16GB

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Samsung 1600 CL10 Series 8GB

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Elpida EBJ10UE8BAFA-AE-E 1GB

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Crucial Technology BLS8G4D26BFSC.16FBD2 8GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Kingston KGTWW1-MIE 4GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Avant Technology J642GU42J5213NF 16GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Micron Technology 8ATF1G64HZ-2G6J1 8GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Corsair CMR32GX4M4C3200C16 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

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Wilk Elektronik S.A. GR2666S464L19/16G 16GB

Team Group Inc. DDR4 2666 8GB

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Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB