Samsung M393B2G70BH0-CK0 16GB vs Chun Well Technology Holding Limited D4U0832160B 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Chun Well Technology Holding Limited D4U0832160B 8GB

Chun Well Technology Holding Limited D4U0832160B 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Chun Well Technology Holding Limited D4U0832160B 8GB

需要考虑的原因
Chun Well Technology Holding Limited D4U0832160B 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 54

左右 -69% 更低的延时
更快的读取速度，GB/s

20.5 9.2

测试中的平均数值
更快的写入速度，GB/s

14.5 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Chun Well Technology Holding Limited D4U0832160B 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 32
读取速度，GB/s

9.2 20.5
写入速度，GB/s

8.1 14.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2105 3379

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avant Technology F641GU67F9333G 8GB

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Unifosa Corporation HU564404EP0200 4GB

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G Skill Intl F4-2666C18-8GTZR 8GB

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Micron Technology 18ASF1G72PZ-2G1AV 8GB

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Kingston KHX1600C9D3/8G 8GB

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G Skill Intl F4-2400C17-4GNT 4GB

G Skill Intl F4-2400C17-4GNT 4GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F4-3200C14-32GTRG 32GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Crucial Technology CT8G4SFRA32A.C16FG 8GB