Samsung M393B2G70BH0-CK0 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Samsung M393B2G70BH0-CK0 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 54

左右 -74% 更低的延时
更快的读取速度，GB/s

11.8 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 31
读取速度，GB/s

9.2 11.8
写入速度，GB/s

8.1 8.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2105 2354

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GR7AFR8N

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Transcend Information TS1GLH72V1H 8GB

Transcend Information TS1GLH72V1H 8GB

Kingston KHX1866C10D3/8GX 8GB

Kingston KHX1866C10D3/8GX 8GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Kingston KN2M64-ETB 8GB

Kingston KN2M64-ETB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston KHX2400C14S4/8G 8GB

Kingston KHX2400C14S4/8G 8GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB

Kingston 9905469-153.A00LF 4GB

Kingston 9905469-153.A00LF 4GB

Apacer Technology GD2.1542WS.003 8GB

Apacer Technology GD2.1542WS.003 8GB

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

Patriot Memory (PDP Systems) PSD34G13332S 4GB

SK Hynix HMT351S6CFR8C-H9 4GB

SK Hynix HMT351S6CFR8C-H9 4GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 9905624-007.A00G 8GB

Kingston 9905624-007.A00G 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Apacer Technology 78.CAGP7.4020B 8GB

Apacer Technology 78.CAGP7.4020B 8GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Corsair CMG64GX4M2D3600C18 32GB

Corsair CMG64GX4M2D3600C18 32GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 4ATF51264HZ-2G3E2 4GB

Micron Technology 4ATF51264HZ-2G3E2 4GB