Samsung M393B2G70BH0-YK0 16GB vs G Skill Intl F4-3600C19-8GVSB 8GB

总分

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

总分

G Skill Intl F4-3600C19-8GVSB 8GB

G Skill Intl F4-3600C19-8GVSB 8GB

差异规格评论

差异

Samsung M393B2G70BH0-YK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-YK0 16GB

报告一个错误

G Skill Intl F4-3600C19-8GVSB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GVSB 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 63

左右 -103% 更低的延时
更快的读取速度，GB/s

19.2 8.1

测试中的平均数值
更快的写入速度，GB/s

17.8 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-3600C19-8GVSB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 31
读取速度，GB/s

8.1 19.2
写入速度，GB/s

7.5 17.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1945 3895

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C19-8GVSB 8GB

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AMD R5316G1609U2K 8GB

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Ramaxel Technology RMSA3260MB78HAF2400 8GB

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Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-2666C18-8GRS 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Micron Technology 16ATF1G64AZ-2G1B1 8GB

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Kingston KF552C40-16 16GB

Crucial Technology CT32G4SFD832A.M16FB 32GB

Crucial Technology CT32G4SFD832A.M16FB 32GB